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Diode
RA20H8994M RF Power Amplifiers
Parameter Level Value Unit Supply situation Discontinued Drain Voltage Typ 12.5 V Frequency (Min – Max) 896~941 MHz Output Power 20 W Package H2S Input Power Typ 50 mW Drain Efficiency (Min) 25 % Feature – RoHS Directive Compliant with RoHS (2011/65/EU、(EU) 2015/863) SKU: 5487FB8/25 -
Arduino
Adafruit HUZZAH32-ESP32
A feature-rich MCU with integrated Wi-Fi and
Bluetooth connectivity for a wide-range
of applications- 240 MHz dual core Tensilica LX6 microcontroller with 600 DMIPS
- Integrated 520 KB SRAM
- Integrated 802.11b/g/n HT40 Wi-Fi transceiver, baseband, stack and LWIP
- Integrated dual mode Bluetooth (classic and BLE)
- 4 MByte flash include in the WROOM32 module
SKU: 5487FB8/24
RA20H8994M RF Power Amplifiers
28 in stock
Parameter | Level | Value | Unit |
---|---|---|---|
Supply situation | Discontinued | ||
Drain Voltage | Typ | 12.5 | V |
Frequency (Min – Max) | 896~941 | MHz | |
Output Power | 20 | W | |
Package | H2S | ||
Input Power | Typ | 50 | mW |
Drain Efficiency (Min) | 25 | % | |
Feature | – | ||
RoHS Directive | Compliant with RoHS (2011/65/EU、(EU) 2015/863) |
₨10,567.00
28 in stock
DESCRIPTION The 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES Enhancement-Mode MOSFET Transistors (IDD VGG=5V, Pin=50mW Broadband Frequency Range: 896-902/ 935-941MHz Low-Power Control Current IGG=1mA (typ) at VGG=5V Module Size: x 9.88 mm Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
SYMBOL VDD VGG Pin Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS 935-941MHz, ZG=ZL=50
ELECTRICAL CHARACTERISTICS ZG=ZL=50 , unless otherwise specified) SYMBOL PARAMETER
f Pout 2fo in IGG Frequency Range Output Power Total Efficiency 2 Harmonic Input VSWR Gate Current Stability Load VSWR Tolerance to 25W (VGG control), Load Pin=50mW, Pout=20W (VGG control), Load VSWR=8:1
All parameters, conditions, ratings, and limits are subject to change with out notice.
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 OUTPUT POWER P out (dBm) POWER GAIN Gp(dB) 50
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
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Technical Specifications
Brand | Apple |
Item Height | 18 Millimeters |
Item Width | 31.4 Centimeters |
Screen Size | 13 Inches |
Item Weight | 1.6 Kg |
Product Dimensions | 21.9 x 31.4 x 1.8 cm |
Item model number | MF841HN/A |
Processor Brand | Intel |
Processor Type | Core i5 |
Processor Speed | 2.9 GHz |
RAM Size | 8 GB |
Hard Drive Size | 512 GB |
Hard Disk Technology | Solid State Drive |
Graphics Coprocessor | Intel Integrated Graphics |
Graphics Card Description | Integrated Graphics Card |
Hardware Platform | Mac |
Operating System | Mac OS |
Average Battery Life (in hours) | 9 |
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